NIST UNIVERSITY
Institute Park, Berhampur, Odisha-761008, India

Debashis Panda

Dr. Debashis Panda

Associate Professor

Department of Physics (SCHOOL OF SCIENCE)

dpanda@nist.edu
8093991477
-

Education

PHD in Solid state device
Indian Institute of Technology Kharagpur
2011
Master in Electronics in
Guru Ghasidas Central University
2002

Work Experience

Associate Professor
National Institute of Science and Technology
Guest Lecturer
Contai P.K. College, Vidyasagar University
Teaching Assistant and Lab Instructor
Indian Institute of Technology Kharagpur
Guest Lecturer
Netaji Subhas Open University
Post Doctoral Employee
University of Singapore
Post Doctoral Fellow
University of Utah
Post Doc
National Chiao Tung University Taiwan
Post Doctoral Employee
University of Utah, USA

Research Interests

  • Nanoscience and nanotechnology
  • Semiconductor device, processing and characterization
  • Ferrofluid
  • Flash memory and resistive switching memory devices
  • Photovoltaic and MEMS device
  • Silicide, germanide gate electrode and Schottky diode
  • Development of Cost-effective, Low-Power, Flexible Non-Volatile Memory Devices using Nano-Crossbar Arrays Organic Resistive Switching Memories, SERB project grant of 29 Lakh in 2019-2021.

Publications

  1. 7-th International Conference on Materials for Advanced Technologies (ICMAT 2013), Suntec Singapore, 30 Jun-5 July, 2013 (Participant).
  2. 6th International Conference on Computers and Devices for Communication (CODEC 2015), Swissotel, Kolkata, India, December 16-18, 2015 (Oral presentation).
  3. Organising committee Member of the International Conference on Frontier in Material Science and Technology (ICFMST-2015), NIST Berhampur, Dec. 10-12, 2015.(Conference Organised)
  4. Organising committee Member of the IEEE Mini-Colliqulam and 1st National Conference on Device and Circuits 2015 (IEEE MQ and NCDC 2015), NIST Berhampur, 20-21 February 2015. (Conference Organised)
  5. International Conference on Frontier in Material Science and Technology (ICFMST-2015), NIST, Berhampur, India, December 10-12, 2015 (Organiser).
  6. IEEE Mini-Colliqulam and 1st National Conference on Device and Circuits 2015 (IEEE MQ and NCDC 2015), National Institute of Science and Technology, Berhampur, Orissa, 20-21 February 2015, (Organiser and Oral presentation).
  7. IEEE Mini-Colliqulam and 1st National Conference on Device and Circuits 2016 (IEEE MQ and NCDC 2016), 19-20 February 2015, National Institute of Science and Technology, Berhampur, Orissa (Organiser).
  8. International Conference on Technologically Advanced Materials and Asian Meeting on Ferroelectricity (ICTAM-AMF10), November 7-11, 2016, University of Delhi, India (Invited presentation).
  9. Organising committee Member of the IEEE Mini-Colliqulam and 2nd National Conference on Device and Circuits 2016 (IEEE MQ and NCDC 2016), NIST Berhampur, 19-20 February 2016.(Conference Organised)
  10. Organising committee Member of the International Workshop on Advanced Materials (IWAM-2017), NIST Berhampur, Dec. 19-21, 2017.(Conference Organised)
  11. Organising committee Member of the International Conferences on MEMS and Semiconductor Nanotechnology (MEMSNANO-2005), IIT Kharagpur, Dec. 20-22, 2005.(Conference Organised)
  12. International Conference on MEMS and Semiconductor Nanotechnology (MEMSNANO-2005), IIT-Kharagpur, India, December 20-22, 2005 (Participant).
  13. International Symposium on Advanced Materials and Processing (ISAMAP2K4), IIT-Kharagpur, India, December 6-8, 2004 (Oral presentation).
  14. International Conference on Computers and Devices for Communications (CODEC-2006), Kolkata, India, December 18-20, 2006 (Oral presentation).
  15. IEEE, 14th International Symposium on VLSI Technology, Systems and Applications (2007 VLSI-TSA), Hsinchu, Taiwan, April 23-25, 2007 (Participant).
  16. 18th International Photovoltaic Science and Engineering Conference & Exhibition (PVSEC 2009), Science City, Kolkata, India, January 19-23, 2009 (Participant).
  17. 97th Indian Science Congress 2010 (ISC 2010), Kerala University, India, January 3-7, 2010 (Invited talk).
  18. IEEE International Electron Device Meeting and Symposium 2011 (IEDMS 2011), NTUST, Taipei, Taiwan, November 17-18, 2011 (Oral presentation).
  19. International Conference on Communication, Computers and Devices (ICCCD-2010), IIT Kharagpur, India, December 10-12, 2010 (Oral presentation).
  20. IEEE, 19th International Symposium on VLSI Technology, Systems and Applications (2012 VLSI-TSA), Hsinchu, Taiwan, April 23-25, 2012 (Participant).
  21. International Symposium on Non-Volatile Memory, at NCTU, Hsinchu, Taiwan, Mar 26 2012.
  22. Thirteenth International Workshop on Physics of Semiconductor Devices (IWPSD-2005), NPL, New Delhi, India, December 16-20, 2005 (Poster presentation).
  23. Workshop on Advanced Electronic devices by Prof. Arun Chatterjee of KLA Tencor Pvt. Ltd., at Central Research Facility, IIT Kharagpur, India, February 20-21, 2007 (Participant).
  24. National workshop on ‘Indian Nanoelectronics Users Program’ IIT Mumbai, India, May 30-31, 2009
  25. IEEE, 2nd International Workshop on Electron Devices and Semiconductor Technology (IEDST 2009), IIT Mumbai, India, Jun 01-02, 2009 (Two Oral and two Poster presentations).
  26. International Conference and Workshop on Nanostructured Ceramics and other Nanomaterials (ICWNCN), at Delhi University, New Delhi, March 13-16, 2012 (Poster presentations).
  27. 18th International Workshop on Physics of Semiconductor Devices (IWPSD 2015), Indian Institute of Science, Bangalore, India, December 7-10, 2015 (Oral presentation).
  28. Chun-An Lin, Debashis Panda and Tseung-Yuen Tseng, “Improvement of Resistive Switching Properties of Ti/ZrO2/Pt with Embedded Germanium”, In: Advances in Multifunctional Materials and Systems II: Ceramic Transactions, Editors: Jun Akedo, Tseung-Yuen Tseng, Xiang Ming Chen; ISBN: 9781118771402, John Wiley & Sons, Inc. NJ, USA, Volume 245, Chapter 10, pp. 111-116, (2014).
  29. D. Panda, A. Dhar and S.K. Ray, “Metal Nanocrystal Floating Gate Memory Devices”; In: Advances in Microelectronics and Photonics; Editor: Satyabrata Jit; ISBN 978-1-61470-956-5; 2011 Nova Science Publishers, Inc., Chapter 2, pp. 25-59, (2011).
  30. Y. R. Tsai, S. Maikap, D. Panda, S. Z. Rahaman, C. S. Lai, P. J. Tzeng, C. H. Lin, T. C. Tien, T. Y. Wu, C. C. Wang, M. J. Kao and M. J. Tsai, “Resistive Switching Memory Using High- Ta2O5 Films”; 2008 International Conference on Solid State Devices and Materials (SSDM 2008), Tsukuba, Japan; 23-26 September 2008 (Extended abstract).
  31. Debashis Panda, Chun-Yang Huang and Tseung-Yuen Tseng, “Resistive Switching Memory Characteristics of Nickel-Silicide Nanocrystals Embedded HfO2 Film”; 221st ECS Meeting, Seattle, Washington, USA; May 2012.
  32. Debashis Panda, Chun-Yang Huang, Chung-Jung Hung, Pang Lin and Tseung-Yuen Tseng, “Improved Resistive switching characteristics in ultrathin NiSi layer embedded HfO2 film”; International Conference and Workshop on Nanostructured Ceramics and other Nanomaterials (ICWNCN), at Delhi University, New Delhi, India, pp. 529-530; 13-16 March 2012.
  33. D. Panda*, T. Nayak, A. Pujari, M-C. Wu, and T-Y. Tseng, “Co-existance of Bipolar and Unipolar Switching in Cobalt Nanocrystals Embedded ZrO2 Based RRAM” 6th International Conference on Computers and Devices for Communication (CODEC 2015), Swissotel, Kolkata, India, December 16-18, 2015, available online in IEEE explorer.
  34. T. Nayak, A. Pujari and D. Panda*, “Nonvolatile Bipolar Resistive Switching Mechanism of Pt/Ti/HfO2/Pt Structures”, 18th International Workshop on Physics of Semiconductor Devices (IWPSD 2015), Indian Institute of Science, Bangalore, India, pp. 163, December 7-10, 2015.
  35. A. Pujari, T. Nayak and D. Panda*, “Memristive Switching Characteristics of Cu/TaOx/TiN Device”, 18th International Workshop on Physics of Semiconductor Devices (IWPSD 2015), Indian Institute of Science, Bangalore, India, pp. 16, December 7-10, 2015.
  36. D. Panda*, M. Panda, P. Sahu, and T-Y. Tseng “Effect of NiSi layer on the switching properties of HfO2 RRAM”; 2nd International Conference on Nanotechnology (ICNT 2015), Haldia Institute of Technology, Haldia, India, February 19-22, 2015.
  37. T. Nayak, A. Pujari and D. Panda*, “Nonvolatile Bipolar Resistive Switching Mechanism of Pt/Ti/HfO2/Pt Structure”; 2nd National Conference on Device and Circuits 2016 and IEEE Mini-Colliqulam (IEEE MQ and NCDC 2016), National Institute of Science and Technology, Orissa, India, 19-20 February 2016.
  38. D. Panda*, S. Sachin Kumar and T.-Y. Tseng, “Evolution of Complementary Switching in Titanium Oxide Based RRAM by Annealing”; International Conference on Technologically Advanced Materials and Asian Meeting on Ferroelectricity (ICTAM-AMF10), University of Delhi, India, November 7-11, 2016.
  39. Nikhil Kothari, Satya Sopan Mahato, Sandipan Mallik, Debashis Panda, and Palash Das, “Molar fraction and Well Count Tuned InGaN/ GaN Mulitiple Quantum Well based Heterostructure for Phosphor free White LED Applications” 18th International Workshop on Physics of Semiconductor Devices (IWPSD 2015), Indian Institute of Science, Bangalore, India, pp. 558, December 7-10, 2015.
  40. S. Sachin Kumar, Paritosh Piyush Sahu, and Debashis Panda* "Metal-Oxide Barrier Modeling in Binary Oxide RRAM", International Electron Devices and Materials Symposium (IEDMS 2017), Hsinchu, Taiwan, September 6-8, 2017.
  41. Paritosh Piyush Sahu, S. Sachin Kumar and Debashis Panda* "Reset modelling and simulation of unipolar NiO RRAM devices", International Electron Devices and Materials Symposium (IEDMS 2017), Hsinchu, Taiwan, September 6-8, 2017.
  42. Paritosh Piyush Sahu and Debashis Panda*, “Thermal Assisted Reset Modelling in NiO Based Unipolar Resistive Switching Memory”; IEEE Mini-Colliqulam and 3rd National Conference on Device and Circuits 2017 (IEEE MQ and NCDC 2017), National Institute of Science and Technology, Orissa, India, 6-7 March, 2017.
  43. S.S Kumar, P.P Sahu, R. Kumari, S. Mohanty, A. Pradhan, D. Hansa, and D. Panda*, “Barrier Height Modulation in HFO2 RRAM”, in 4th National Conference on Devices and Circuits organized by IEEE ED-NIST, pp. 168-171, February 2018.
  44. Debashis Panda, Roshni Kumari and Ankit Kr. Panda “Evolution of Conducting Filament in TiOx Memristor using Conducting Atomic Force Microscopy”, in International Conference on Microscopy & 39th annual meeting of Electron Microscope Society of India, Bhubaneswar, India, 17-20 July, 2018.
  45. A. Pujari, S. Mohanty, A. Jena, D. Hansa, and D. Panda*, “Switching Conduction of TaOx RRAM” in 4th National Conference on Devices and Circuits organized by IEEE ED-NIST, pp. 92-95, February 2018.
  46. Debashis Panda*, Ming-Chi Wu, and Tseung-Yuen Tseng, “Evolution of Bipolar to Unipolar Switching in Cobalt Nanocrystals Embedded ZrO2 Based Memristor”; IEEE Mini-Colliqulam and 1st National Conference on Device and Circuits 2015 (IEEE MQ and NCDC 2015, ISBN- 9789382208754), National Institute of Science and Technology, Orissa, India, 20-21 February 2015.
  47. D. Panda, A. Dhar and S.K. Ray, “Resistive Switching Memory Characteristics of Pt/TiO2:Ni-nc:TiO2/Pt Structures”; International Conference and Workshop on Nanostructured Ceramics and other Nanomaterials (ICWNCN), at Delhi University, New Delhi, India, pp. 258-259; March 2012.
  48. Firman Mangasa Simanjuntak, Debashis Panda, Sridhar Chandrasekaran, Rakesh Aluguri, Chun-Chieh Lin and Tseung-Yuen Tseng, “Top Electrode Thickness Dependent on Switching Characteristics of ZnO2/ZnO Bilayer Transparent Resistive Random Access Memory Devices”, in International Conference on Microscopy & 39th annual meeting of Electron Microscope Society of India, Bhubaneswar, India, 17-20 July, 2018.
  49. P.P. Sahu, S.S. Kumar, R. Kumari, S. Rout, A. Jena, S. Swathi, and D. Panda*, “High Resistance State Modeling in Nickel Oxide RRAM” in 4th National Conference on Devices and Circuits organized by IEEE ED-NIST, pp. 41-45, February 2018.
  50. T. Nayak, A. Pradhan, S. Rout, S. Swathi, and D. Panda*, “Current Conduction in HfO2 Based RRAM” in 4th National Conference on Devices and Circuits organized by IEEE ED-NIST, pp. 24-27, February 2018.
  51. D. Panda, S. Sachin Kumar, F. Mangasa, A. Dash, A. Anand, T-Y Tseng, N. Gogula, and S. K. Ray; “Annealing Effects in Structural and Electro-Optical Properties of Co Doped ZnO RRAM”, in International Conference on Microscopy & 39th annual meeting of Electron Microscope Society of India, Bhubaneswar, India, 17-20 July, 2018.
  52. Chun-Yang Huang, Ming-Chi Wu, Debashis Panda, and Tseung-Yuen Tseng, “Improve Resistive Switching Characteristics in Mixed HfO2 and Al2O3 Layer by Layer Structure”; 221st ECS Meeting, Seattle, Washington, USA; May 2012.
  53. A. Pujari, T. Nayak and D. Panda*, “Conduction Mechanism of TaOx Based Resistive Switching Memory Device”, International Conference on Frontier in Material Science and Technology (ICFMST-2015), NIST, Berhampur, India, December 10-12, 2015.
  54. T. Nayak, A. Pujari and D. Panda*, “Current Conduction Mechanism of Pt/Ti/HfO2/Pt RRAM Device”, International Conference on Frontier in Material Science and Technology (ICFMST-2015), NIST, Berhampur, India, December 10-12, 2015.
  55. D. Panda*, A. Pujari, T. Nayak and T-Y. Tseng, “Enhanced Switching Characteristics of Nickel Silicide Layer Embedded HfO2 RRAM”, 18th International Workshop on Physics of Semiconductor Devices (IWPSD 2015), Indian Institute of Science, Bangalore, India, December 7-10, pp. 36, 2015.
  56. D. Panda, A.N. Banerjee, S. Saha and K.K. Chattopadhyay, “Wet-chemical synthesis of p-type γ-Na0.71Co0.96O2 powder and its characterization”; Proceedings of International Symposium on Advanced Materials and Processing (ISAMAP2K4), Kharagpur, India, pp.-507-512; 6-8 December 2004.
  57. A.N. Banerjee, D. Panda and K.K. Chattopadhyay, “Fabrication of p-CuAlO2/n-ZnO:Al heterojunction diodes for transparent electronics”; Proceedings of Seventh International Conference on Optoelectronics, Fiber Optics and Photonics (Photonics-2004), Cochin, India; 9-11 December 2004.
  58. A.N. Banerjee, P.K. Ghosh, D. Panda and K.K. Chattopadhyay, “Transparent P-Type semiconducting delafossite CuAlO2 thin film: promising material for optoelectronic device technology”; International conference on the physics, chemistry and engineering of Solar Cells (SCELL-2004), Badajoz, Spain; 2004.
  59. D. Panda, S. Jana ¬and K.K. Chattopadhyay, “Electro-Optical Characterization of γ-Na0.71Co0.96O2 Powder Synthesized by Chemical Route”; Proceedings of Thirteenth International Workshop on Physics of Semiconductor Devices (IWPSD-2005), New Delhi, India, pp.-1436-1440; 13-17 December 2005.
  60. D. Panda, A. Basar, A. Dhar and S.K. Ray, “Electrical and Structural Characteristics of Cobalt-Nickel-Silicide Thin Films For Ultrashallow Junction Devices”; Proceedings of Thirteenth International Workshop on Physics of Semiconductor Devices (IWPSD-2005), New Delhi, India, pp.- 695-700; December 2005.
  61. D. Panda, K. Das, A. Dhar and S.K. Ray, “Fabrication of CoxNi1-xSi2/n-Si junction Schottky diode for ULSI device applications”; Proceedings of International Conference on Computers and Devices for Communications (CODEC-2006), Kolkata, India, pp. 323-326; 18-20 December 2006.
  62. D. Panda, K. Das, R.K. Singha, S. Das, A. Dhar and S.K. Ray, “Growth of Nickel Germanides on MBE Grown Ge films for High Mobility Devices”; Proceedings of International Conference on Computers and Devices for Communications (CODEC-2006), Kolkata, India, pp. 1-4; 18-20 December 2006.
  63. D. Panda, K. Das, S.K. Ray and A. Dhar, “Memory characteristics of Nickel Nanocrystals with High-k Dielectric Tunneling Barrier”; International Conference on Materials for Advanced Technologies 2007 (ICMAT 2007), Singapore; 2007.
  64. D. Panda, S. Maikap, A. Dhar and S.K. Ray, “Characteristics of nickel nanocrystals embedded in HfO2 matrix for flash memory devices”; 10th International Conference on Advanced Materials 2007 (IUMRS-ICAM 2007), Bangalore, India; pp. V-21, October 2007.
  65. S. Maikap, T.Y. Wang, P.J. Tzeng, D. Panda, L.S. Lee, J.R. Yang, M.-J. Kao and M.-J. Tsai, “Memory Characteristics of Atomic Layer Deposited High-k HfAlO Nanocrystals”; 10th International Conference on Advanced Materials 2007 (IUMRS-ICAM 2007), Bangalore, India; pp. V-25, October 2007.
  66. T.-Y. Wang, S. Maikap, P.J. Tzeng, D. Panda, L.S. Lee, M.-J. Tsai and J.-R. Yang, “Effect of nano-grain on the memory characteristics of high- HfAlO charge trapping layers for nano-scale non-volatile memory device applications”; 2007 International Conference on Solid State Devices and Materials (SSDM 2007), Tsukuba, Japan, pp. 464-465; 18-21 September 2007 (Extended abstract).
  67. P. Bose, D. Panda, A. Dhar and S.K. Ray, “Synthesis and Characterization of TiO2 Nanotubes for Photovoltaic Applications”; Proceedings of Fifteenth International Workshop on Physics of Semiconductor Devices (IWPSD 2009), JMI, New Delhi, pp. 256; 15-19 December 2009.
  68. D. Panda, A. Dhar, S. Maikap and S.K. Ray, “Charge Storage Memory Characteristics of Tetralayer Flash Memory Structures Using NiGe Nanocrystals”; International Conference on ‘Advanced Nanomaterials and Nanotechnology’ (ICANN-2009), IIT Guwahati; 9-11 December 2009.
  69. Ayan Ray, Debashis Panda, Tamita Rakshit, Sanjay K. Mandal, Indranil Manna, and Samit K. Ray, “Growth and Optical Properties of La0.7Sr0.3MnO3/ZnO Heterojunctions”; IEEE IEDST 2009, Mumbai, India; 1-2 June 2009 [SCI] [Citation=1].
  70. Debashis Panda, Achintya Dhar and Samit K. Ray, “Non-volatile Unipolar Memristive Switching Mechanism of Pulse Laser Ablated NiO Films”; IEEE IEDST 2009, Mumbai, India; 1-2 June 2009 [SCI] [Citation=1].
  71. Debashis Panda, Achintya Dhar and Samit K. Ray, “Improved Resistive Switching Characteristics of Nickel Nanocrystals Embedded TiO2 Films”; International Conference on Communication, Computers and Devices (ICCCD-2010), IIT Kharagpur, India, pp. 1-5; 8-12 December 2010.
  72. D. Panda, A. Dhar and S.K. Ray, “Memristive Switching Characteristics of Ni Nanocrystals Embedded TiO2 Films”; IEEE International NanoElectronics. Conference (2011 INEC), Chang Gung University, Tao-Yuan, Taiwan; Jun 2011.
  73. Sounak Ray, Debashis Panda* and Rakesh Alugiri, “Enhanced Charge Storage Characteristics of Nickel Nanocrystals Embedded Flash Memory Structures”; 2nd International Conference on Advanced Nanomaterials and Nanotechnology (ICANN-2011); December 2011 (corresponding author).
  74. Ming-Chi Wu, Debashis Panda, Tsung-Han Wu, and Tseung-Yuen Tseng, “Bipolar and Unipolar Resistive Switching of Cobalt Nanocrystals Embedded ZrO2 Based Memory Capacitors”; IEEE IEDMS 2011, at NTUST, Taiwan; 17-18 November 2011.
  75. Chun-An Lin, Debashis Panda, Tseung-Yuen Tseng, “Improvement of resistive switching properties of Ti/ZrO2/Pt with embedded Germanium”; 10th Pacific Rim Conference on Ceramic and Glass Technology, San Diego, CA, USA, Jun 2013.
  76. Debashis Panda, Chun-Yang Huang, and Tseung-Yuen Tseng, “Recent Activities on ZrO2 Based Resistive Switching Memory Devices-Keynote”; 7-th International Conference on Materials for Advanced Technologies (ICMAT 2013), Suntec Singapore, 30 Jun-5 July, 2013.
  77. 1. P-Y. Jung, D. Panda, S. Chandrasekaran, S. Rajasekaran, and T-Y. Tseng, “Enhanced Switching Properties in TaOx Memristors Using Diffusion Limiting Layer for Synaptic Learning”, IEEE Journal of the Electron Devices Society (IF=2.6) Vol. 8, pp. 110 (Jan 2020)
  78. S. Sachin Kumar, Paritosh Piyush Sahu and Debashis Panda*, “Barrier Potential Engineering in Ti/HfO2/Pt RRAM”; J. Nanoscience and Nanotechnology (IF=1.339), 17, 9328-9332, (Nov 2017).
  79. Debashis Panda, Achintya Dhar and Samit K. Ray; “Schottky Barrier Characterization of Cobalt-Nickel Silicide/n-Si Schottky Junctions for Scaled-Si CMOS Applications”; IEEE Trans. Electron Devices (IF=2.476), 55(9), 2403-2408, (September 2008)
  80. D. Panda, A. Dhar and S.K. Ray, “Characteristics of DC Magnetron Sputtered Ternary Cobalt-Nickel Silicide Thin Films for Ultra Shallow Junction Devices”, Microelectronic Engineering (IF=1.557), 85, 559-565 (March 2008)
  81. D. Panda, M. Ranot, K. Das, D. Bhattacharya, A. Dhar, M. Chakraborty and S. K. Ray; “Synthesis and Characterization of Nickel Titanium Melt-spun Ribbon for Micro-actuator Device Application”; Indian Journal of Engineering & Materials Sciences (IF=0.223), 15(2), 95-98 (April 2008)
  82. Debashis Panda* and Paritosh Piyush Sahu, “Thermal assisted reset modelling in nickel oxide based unipolar resistive switching memory”; J. Applied Physics (IF=2.169), 121, 204504 1-9 (2017)
  83. Sounak K. Ray, Debashis Panda* and Rakesh Aluguri; “Enhanced Charge Storage Characteristics of Nickel Nanocrystals Embedded Flash Memory Structures”; Journal of Experimental Nanoscience (IF=1.147), iFirst, pp.-1-7, (2012)
  84. Debashis Panda, Achintya Dhar and Samit K. Ray; “Non-volatile Memristive Switching Characteristics of TiO2 Films Embedded With Nickel Nanocrystals”; IEEE Trans. Nanotechnology (IF=2.292), 11(1), 51-55, (January 2012)
  85. D. Panda, S. Maikap, A. Dhar and S. K. Ray; “Memory characteristics of Nickel Nanocrystals with High-k Dielectric Tunneling Barrier”; Electrochemical and Solid-State Lett. (IF=2.212), 12(1), H7-H10, (2009)
  86. Debashis Panda, Achintya Dhar and Samit K. Ray; “Improved charge storage characteristics of nickel nanocrystals embedded in high k dielectric for flash memory devices” Semiconductor Science and Technology (IF=1.723), 24, 115020, (November 2009)
  87. D. Panda, A. Dhar and S.K. Ray; “Nonvolatile and Unipolar Resistive Switching Characteristics of Pulsed Laser Ablated NiO Films”; J. Applied Physics (IF=2.169), 108, 104513 1-104513 7, (November 2010)
  88. M. Ismail, E. Ahmed, A. Rana, F. Hussain, M. Nadeem, D. Panda, N. Shah, “Improved Endurance and Resistive Switching Stability in Ceria Thin Films Due to Charge Transfer Ability of Al Dopant”; ACS Applied Materials & Interfaces (IF=7.145), 8, 6127-6136 (Feb 2016)
  89. M. Ismail, C.Y. Huang, D. Panda, C.J. Hung, T.L. Tsai, J.H. Jieng, C.A. Lin, U. Chand, A.M. Rana, E. Ahmed, I. Talib, M.Y. Nadeem, and T.Y. Tseng; “Forming-free bipolar resistive switching in nonstoichiometric ceria films”; Nanoscale Research Letters (IF=2.726), 9, 45, (February 2014)
  90. Debashis Panda and Tseung-Yuen Tseng; “Growth, dielectric properties, and memory device applications of ZrO2 thin films” Critical review; Thin Solid Films (IF=2.038), 531, 1-20, (January 2013)
  91. Debashis Panda and Tseung-Yuen Tseng, “Perovskite oxides as resistive switching memories- a review”; Ferroelectrics, (IF=0.371), 471(1), 23-64 (November 2014)
  92. D. Panda*, F.M. Simanjuntak and T-Y. Tseng, “Temperature induced complementary switching in titanium oxide resistive random access memory”; AIP Advances (IF=1.444), 6, 075314 1-7 (2016)
  93. Debashis Panda, and Tseung-Yuen Tseng; “Review: One-dimensional ZnO Nanostructures- Fabrication, Opto-electronic Properties, and Device Applications” Journal of Materials Science (IF=2.371), 48(20), 6849-6877 (October 2013)
  94. Firman Mangasa Simanjuntak, Debashis Panda, Wei-Kung Hwa, and Tseung-Yuen Tseng, “Status and prospects of ZnO-based resistive switching memory devices”; Nanoscale Research Lett. (IF=2.726), 11, 368 1-31 (2016)
  95. D. Panda*, and M. Panda, “Non-volatile Flash Memory Characteristics of Tetralayer Nickel-Germanide Nanocrystals Embedded Structure”; J. Nanoscience and Nanotechnology (IF=1.339), 16(1), 1216-1219, (Jan 2016)
  96. Firman Mangasa Simanjuntak, Om Kumar Prasad, Debashis Panda, Chun-An Lin, Tsung-Ling Tsai, Kung-Hwa Wei, and Tseung-Yuen Tseng, “Impacts of Co doping on ZnO transparent switching memory device characteristics”; Appl. Phys. Lett. (IF=3.569), 108, 183506 1-5 (May 2016)
  97. D. Panda*, A. Dhar and S.K. Ray, “Diffusion kinetics and evolution of self-assembled nickel germanide nanorings on germanised Si (100)”; RSC Advances (IF=3.84), 5, 33283-33288 (April 2015)
  98. F.M. Simanjuntak, D. Panda, T-L. Tsai, C-A. Lin, K-H. Wei, and T-Y. Tseng, “Enhancing the memory window of AZO(TE)/ZnO/ITO(BE) transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode”; Journal of Materials Science (IF=2.371), 50(21), 6961-6969 (July 2015)
  99. F.M. Simanjuntak, D. Panda, T-L. Tsai, C-A. Lin, K-H. Wei, and T-Y. Tseng, “Enhanced Switching Uniformity in AZO/ZnO1-x/ITO Transparent Resistive Memory Devices by Bipolar Double Forming”; Appl. Phys. Lett. (IF=3.569), 107(3), 033505-64 (July 2015)
  100. Debashis Panda, Chun-Yang Huang and Tseung-Yuen Tseng; “Resistive Switching Characteristics of Nickel-Silicide layer Embedded HfO2 Film”; Appl. Phys. Lett. (IF=3.569), 100, 112901 1-112901 5, (March 2012)
  101. Debashis Panda* Paritosh Piyush Sahu and T-Y. Tseng, “A Collective Study on Modelling and Simulation of Resistive Random Access Memory”; Nanoscale Research Lett. (IF=2.726), 13(8), 1, 2018
  102. Sridhar Chandrasekaran, Firman Simanjuntak, R. Saminathan, Debashis Panda and Tseung-Yuen Tseng, "Improving linearity by introducing Al in HfO2 as memristor synapse device" Nanotechnology (IF=3.399), 30, 445205, 2019.
  103. Sridhar Chandrasekaran, Firman Simanjuntak, Debashis Panda and Tseung-Yuen Tseng, "Enhanced synaptic linearity in ZnO-based invisible memristive synapse by introducing double pulsing scheme" IEEE Trans Electron Device (IF=2.62), 66(1), 4722-4726, (Sept 2019).
  104. B. Pattanayak, F.M. Simanjuntak, D. Panda, C-C. Yang, A. Kumar, P–A. Le, K–H. Wei, and T–Y. Tseng; "Role of precursors mixing sequence on the properties of CoMn2O4 cathode materials and their application in pseudocapacitor"; Scientific Report (Nature group) (IF=4.011), Vol. 9, Page. 16852, (Nov 2019).
  105. K. Das, V. Nagarajan, M.L. NandaGoswami, D. Panda, A. Dhar and S.K. Ray; “Optical characteristics of Er3+- doped Ge nanocrystals in sol-gel derived SiO2 glass”; Nanotechnology (IF=4.017), 18, 095704 1-5 (March 2007)
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