Dr. Ajit K. Panda

Professor, Electronics Engg.

Email:   akpanda62@hotmail.com

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PUBLICATIONS:

Publications from 2011 onwards

In Journals (2011 onwards)

  1. Role of Nanoscale AlN and InN for the Microwave Characteristics of AlGaN/(Al,In)N/GaN- based HEMT, Semiconductors, vol 45, No. 9, pp. 1211-1218, 2011, T R Lenka and A K Panda.
  2. Effect of Structural Parameters on 2DEG Density and C~V Characteristics of AlxGa1-xN/AlN/GaN-based HEMT, Indian Journal of Pure and Applied Physics, vol 49, No 6, pp. 416-422, 2011, T R Lenka and A K Panda.
  3. Characteristics Study of 2DEG Transport Properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT, Semiconductors, vol 45, No. 5, pp. 650-656, 2011, T R Lenka and A K Panda
  4. Self-consistent Subband Calculations of AlxGa1-xN/(AlN)/GaN-based High Electron Mobility Transistor, Advanced Materials Research, vol 159, pp.342-347, 2011 (Trans Tech Publication, Switzerland) T R Lenka and A. K. Panda.

In Conferences (2011 onwards)

  1. Performance Evaluation of 90nm InGaAs HEMTs, Proceedings of 2011 International Conference on Signal Processing, Communication, Computing and Networking Technologies (ICSCCN 2011) IEEE No. 978-1-61284-653-8/11, pp. 651-654, 2011, M Mohapatra, A Mohapatra, and A K Panda.
  2. Studies of InxAl1-xN/InN/GaN-based HEMT with strained InN Channel, CMDAYS 2011, pp. 146, T R Lenka and A K Panda.
  3. Color Image Enhancement by Scaling Luminance and Chromatic Components, Conference on Signal Processing and Real Time Operating System (SPRTOS) 2011, pp.SIP0404-1 – 6, Satyabrata Das, Sukanti Pal and A. K. Panda.
  4. Antenna Selection Algorithm for MIMO BC Channel Using Partial Side Information, Conference on Signal Processing and Real Time Operating System (SPRTOS) 2011, pp.COM0305-1-5, S K Mishra, P Pattanayak and A. K. Panda.
  5. GaN-based HEMTs for Communication Circuits, Conference on Signal Processing and Real Time Operating System (SPRTOS) 2011, pp.VLP0403-1– 5, T R Lenka and A. K. Panda.
  6. Polarization induced 2DEG Study of Strained Al1-xInxN/GaN-based HEMT, International Symposium on Devices, MEMS, Intelligent Systems Communications 2011, pp. 475-478, T R Lenka and A K Panda.
  7. High Bandgap SiC for High Frequency Signal Generation, International Symposium on Devices, MEMS, Intelligent Systems Communications 2011, pp. 479-482, R K Parida and A K Panda.

PUBLICATIONS TILL 2010

IN JOURNALS (TILL 2010)

  1. Well-Being Analysis of Safety Critical Software: A Case Study for Computer Relaying, International Journal on Electric Power Components and Systems (Taylor and Francis Publications), vol. 38, No.11, pp.1299-1316, 2010, D. Sinha Roy, Aditya Anil, D. K. Mohanta, A K Panda.
  2. Effect of Nanoscale AlN layer for improving 2DEG Transport properties in AlGaN/AlN/GaN-based HEMT, International Journal of Pure and Applied Physics (IJPAP) (ISSN: 0973-1776), vol.6, No.4, pp. 371-378, 2010, T R Lenka and A. K. Panda.
  3. Polarization Dependent Capacitance Voltage Analysis of GaN-based Heterostructure Field Effect Transistor, International Journal of Material Science (IJoMS), vol. 5, No. 5, pp.747-758, 2010, T R Lenka and A. K. Panda
  4. A comparative study of two terminal GaN-based Gunn and IMPATT Devices as high frequency Signal Generator, International Journal of Recent Trends in Engineering (IJRTE), vol. 2, No. 6, pp.4-6, 2009, A K Panda.
  5. RF Characteristics Study of AlxGa1-xAs/InxGa1-xAs/GaAs based Pseudomorphic High Electron Mobility Transistor, International Journal of Electronic and Electrical Engineering, vol. 4, No, 6, pp.28-35, 2009, T R Lenka, A K Panda.
  6. Software Reliability Evaluation of Digital Relaying for Power Transmission Lines, Electric Power Components & Systems (Taylor & Francis Publications), vol. 37, pp. 1260-1274, 2009, D. Sinha Roy, Aditya Anil, D. K. Mohanta, A K Panda.
  7. Digital Relay Software Reliability Allocation Optimization for Transmission Line Protection, International Journal of Reliability and Safety (IJRS), vol 3, No.4, pp.413-426, 2009, D. Sinha Roy, A K Panda, D. K. Mohanta.
  8. Software Reliability estimation of computer relaying for transmission line protection using user-oriented software reliability model, International Journal of Power and Energy Conversion, vol. 1, No. 2/3, pp. 300-312, 2009, Aditya Anil, D. K. Mohanta, D. Sinha Roy and A K Panda
  9. Characteristics study of Modulation doped GaAs/InGaAs/AlGaAs-based Pseudomorphic HEMT, International Journal of Recent Trends in Engineering, vol. 1, No. 3, pp. 186-190, 2009, T R Lenka and A K Panda
  10. Power Analysis and simulation of Low power gated clock design of LFSR using 250nm Technology, International Journal of Computational Intelligence Research and Applications, Vol.3, No.1, pp.157-161, 2009, M. Suresh, A K Panda, M. Shukla et al.
  11. A survey of VLSI Architectures for FFT computations in Signal and Image Processing Applications, The Icfai Univeristy Journal of Telecommunications, vol 1, No. 1, pp. 79-88, 2009, C K Jha, M Suresh, and A K Panda.
  12. Free space based optical communications systems, GITAM Journal of Information, Communication Technology, Vol. 2, No. 1, pp.11-15, 2009, M Hota, S K Tripathy, R K Dash and A K Panda.
  13. Breakdown Characteristics of Modulation Doped GaAs/InxGa1-xAs/AlxGa1-xAs based Pseudomorphic HEMT, Orissa Journal of Physics, Vol. 16, No. 1, pp. 139-148, 2009, T R Lenka and A K Panda.
  14. Characteristics study of GaAs based Pseudomorphic HEMT, GITAM Journal of Information, Communication Technology, Vol. 2, No. 1, pp.159-162, 2009, T R Lenka and A K Panda.
  15. Hardware efficient Architectures for FPGA implementation of FFT Algorithm in multi carrier transmission system, GITAM Journal of Information, Communication Technology, Vol. 2, No. 1, pp.38-43, 2009, C K Jha, M Suresh and A K Panda.
  16. A comparative study on the high band gap material (GaN and SiC)-based IMPATTs, IET Microwave, Antenna and Propogation, vol 2, No. 8, pp. 789-793, 2008, A K Panda, R K Parida, N C Agrawala and G N Dash
  17. Software Reliability Allocation of Digital Relay for transmission line protection using the combined system hierarchy and Fault Tree Approach, IET Software, vol 2, No. 5, pp. 437-445, 2008, Diptendu Sinha Roy, A K Panda and D K Mohanta.
  18. Optimised Implantation profiles for the p-n junction using fourth moment approach for application in high frequency VLSI circuits, Transaction in Electronics, Electrical and Communication engineering, vol 6, No. 2, pp. 44-49, 2008, N C Agrawala, R K Parida, G N Dash and A K Panda.
  19. High-Frequency and Noise Characteristics of Si/Si1-xGex-based Heterostructure IMPATTs/MITATTs, IETE Technical Review, Vol. 21, No.2, pp.125-132, 2004, S. K. Panigrahi and A K Panda.
  20. DC and High-Frequency characteristics of GaN-based IMPATTs - IEEE Trans on Electron Devices, vol. 48, No.4, pp.820-823, 2001, A K Panda, D. Pavlidis and E. Alekseev.
  21. Noise characteristics of GaN-based IMPATTs – IEEE Trans on Electron Devices, vol. 48, No.7, pp.1473-1475, 2001, A K Panda, D. Pavlidis and E. Alekseev.
  22. Optimization of ion implanted low-high-low impurity profile for silicon n+pp+ SDR diode – IETE Tech. Review, vol.15, No.1, pp.67-72, 1998, A.K. Panda and S.P. Pati.
  23. Effect of exponentially graded impurity profiles on the microwave properties of silicon double drift diodes - Asian J. of Physics, vol. 7, No.4, 1998, A.K. Panda, G.N. Dash and S.P. Pati.
  24. Computer studies on nearly 2mm Germanium p-n junction IMPATT source for possible IR detection – Semiconductor Materials and Devices, vol.2, pp.206-215, 1998, S.P. Pati, S. Satapathy and A.K. Panda.
  25. Design optimization of one sided Si/SiGe heterostructure MITATT DDR – Semicond. Sci. and Technol., vol. 12, No.12, pp.1635-1640, 1997, J.K. Mishra, A.K. Panda and G.N. Dash.
  26. An extremely low noise heterojunction IMPATT – IEEE Trans on Electron Devices, vol. 44, No.12, pp.2143-2148, 1997, J.K. Mishra, A.K. Panda and G.N. Dash.
  27. Studies on the microwave properties of limited source diffusion based silicon SDRs – Indian J. of Pure and Applied Physics, vol. 35, No.12, pp.749-755, 1997, A.K. Panda, S. Satapathy, G.N. Dash and S.P. Pati.
  28. Effect of diffusion impurity profiles on the performance of silicon SDRs – Asian J. of Physics, vol. 6, No.3, pp.439-446, 1997, A.K. Panda, S. Satapathy, G.N. Dash and S.P. Pati.
  29. Noise in Mixed Tunneling Avalanche Transit Time (MITATT) diodes – Solid State Electronics, vol. 39, No.10, pp.1473-1479, 1996, G.N. Dash, J.K. Mishra and A.K. Panda.
  30. Computer aided realization of multistep diffusion based Si p+pnn+ double drift doping profiles and studies on their microwave properties – Physics Status Solidi (a), vol. 154, No.2, pp.657-667, 1996, A.K. Panda, G.N. Dash, S. Satapathy and S.P. Pati.
  31. Computer aided optimization of the ion implanted impurity profiles for n+npp+ DDRs with three moment approach – Solid State Electronics, vol. 39, No.5, pp.759-762, 1996, A.K. Panda, G.N. Dash and S.P. Pati.
  32. Influence of ionization rates in a semiconductor on avalanche build up time in p-n junctions – Indian J. of Physics, vol. 69A, pp.183-189, 1995, S.P. Pati, S. Satapathy, A.K. Panda and G.N. Dash.
  33. Computer aided studies on the wide-band microwave characteristics of silicon Double Avalanche Region (DAR) diode - Semicond. Sci. and Technol., vol. 10, pp.854-864, 1995, A. K. Panda, G. N. Dash and S. P. Pati.
  34. Effect of diffusion impurity profile on microwave properties of silicon n+np+ Impatt diodes – Semicond. Sci. and Technol., vol. 9, pp.241-248, 1994, A.K. Panda, G. N. Dash and S.P. Pati.
  35. Phase distortion assisted MITATT design for compensation of performance deterioration due to tunnel current – Journal of the IETE, vol. 39, No.6, pp.375-377, 1993, G.N. Dash, A.K. Panda, J.K. Mishra and S. P. Pati.
  36. Millimeter wave properties of Indium Phosphide Single Drift IMPATT diodes – SuJ Sc. Tech, vol. 10, pp.82-91, 1991, S.P. Pati, A.K. Panda and G.N. Dash

IN CONFERENCES (TILL 2010):

  1. Design of Arithmatic Circuits using Reversible Logic Gates and Power Dissipation calculation, pp. 85-90, ISED-2010, A K Panda et al.
  2. Microwave Characteristics Study of AlGaN/GaN-based Heterojunction Field Effect Transistor, pp.53-54, ICMARS-2010, T R Lenka and A. K. Panda.
  3. Microwave Characteristics of AlxGa1-xN/GaN-based HEMT using Self-consistent Subband Calculations, pp. 139-142, International Symposium on Microwaves (ISM 2010), T R Lenka and A. K. Panda.
  4. THz signal generation using 3C-SiC, 4H-SiC, and 6H-SiC-based SDR MITATTs, pp.427-430, IWPSD 2009, New Delhi, R K Parida, N C Agrawal, G N Dash and A K Panda.
  5. Heterointerface Polarization Effect and DC Characteristics study of AlxGa1-xN/InxGa1-xN/GaN-based High Electron Mobility Transistor, pp.420-423, IWPSD 2009, New Delhi, T R Lenka and A K Panda.
  6. Comparison between the DC and Microwave Performance of Wurtzite phase and Zincblende phase GaN-based IMPATTs, pp.525-528, IWPSD 2009, New Delhi, P R Tripathy, A K Panda, and S P Pati.
  7. A suitable Up Converter Architecture and Design Considerations for Digital Set Top Box for CATV Application, IEEE 978-1-4244-4819 (IEMC 2009), R K Mishra, A K Panda and Saroj K Patro.
  8. Microwave Characteristics of AlxGa1-xN/ InxGa1-xN/GaN-based HEMT using Propagation Delay Model, IEEE 978-81-8465-152-2 (CODEC 2009), T R Lenka and A K Panda.
  9. Prospects of Wide Band Gap Material ZnB-GaN over Low Band Gap GaAs-based IMPATT Devices, IEEE 978-81-8465-152-2 (CODEC 2009), P R Tripathy, A K Panda, and S P Pati.
  10. Studies on the characteristics of GaN-based Gunn diode for THz Signal Generation, pp. 1565-1568, IEEE 978-1-4244-2802-1, 2009, A K Panda, G N Dash, N C Agrawal, R K Parida
  11. Modeling and comparative study on the high frequency and noise characteristics of different polytypes of SiC- based IMPATTs, pp. 1569-1572, IEEE 978-1-4244-2802-1, 2009, A K Panda and R K Parida.
  12. A novel flash Analog-to-Digital Converter design using Cadence tool, IEEE 978-0-7695-3845-7 (Advances in Recent Technologies in Communication and Computing 2009), pp. 28-30, 2009, M Suresh, Santoshi Sahu, Kiran Shadangi, and A K Panda.
  13. Microwave Characteristics of AlxGa1-xAs/InxGa1-xAs/GaAs-based Pseudomorphic HEMT to use in high frequency Communication Circuits, pp.715-718, ISMOT 2009, New Delhi, T R Lenka and A K Panda.
  14. Design of a humidity sensor with PVT variation using AMI c5 CMOS Technology, IEEE 978-4244-2690-4444 (Microwave 2008), pp. 839-842, 2008, K C Behera and A.K. Panda.
  15. GaN-based Gunn diode for high frequency signal generation, IEEE 978-1-4244-1727-8/07 (IWPSD 2007), pp. 514-517, 2007, N C Agrawal, R K Parida, G N Dash, and A K Panda.
  16. A comparative study on the high band gap materials (GaN and SiC)-based IMPATTs, IEEE -1-4244-0748-6/07 (APMC 2007), pp.1669-1672, 2007, N C Agrawal, R K Parida, G N Dash and A K Panda.
  17. Studies on the characteristics of InxAl1-xAs/ InxGa1-xAs based MODFET, Proceedings of National conference on Condensed Matter Days, August 2007, Sudhakar Das, Mihir Hota, and A K Panda
  18. Velocity Overshoot 2D-effect in GaN based submicron Devices, Presented in CODIS 2004, JU, Kolkata, K. C. Sahoo, A. K. Panda.
  19. Velcoity Overshoot 2D effect in submicron devices, Physics of Semiconductor Devices (IWPSD –2003), Narosa Publishing House, pp. 797-799, K. C. Sahoo, and A. K. Panda.
  20. Dynamic characteristics of SiC-based IMPATTs, Physics of Semiconductor Devices (IWPSD –2003), Narosa Publishing House, pp. 794-796, K. C. Sahoo, D. Khadanga, and A. K. Panda.
  21. Potentiality of SiC to use as IMPATTs, National Symposium on Advances in Microwaves and Light Waves (Allied Publishers), pp. 112-115, 2003, Suchismita Nayak, K. C. Sahoo, and A. K. Panda.
  22. Velocity Overshoot 2D-effect in Si MOSFET to use at high-frequency, Proceedings of APSYM-2002, Kochi, pp.185-188, 2002, S. K. Achary, S. K. Panigrahi and A K Panda.
  23. Recent Trends in Microwave/MM wave Generator and Receiver, Proceedings of CSPIT-2002, UCE, Burla, pp. 6-9, 2002, A. Patnaik, M. Suresh, and A. K. Panda.
  24. GaN-based Gunn diode for THz Signal Generation, Proceedings of APSYM-2002, Kochi, pp.193-196, 2002, S. K. Panigrahi and A K Panda.
  25. Potential of GaN to use as Gunn diode - Proceedings of CM days-2001, Sambalpur, pp. 9, 2001, A Tadinada, V Katiyar, and A. K. Panda.
  26. Velocity Overshoot Effect in 2DEG Si-MOSFET - Proceedings of CM days-2001, Sambalpur, pp. 50, 2001, A Behera, A Singhal, Tadinada, V Katiyar, and A. K. Panda.
  27. Optimized Ion Implantation Profiles for the p-n junction to use in VLSI Devices - Proceedings of All India Seminar on Recent Trends in VLSI, VLSI Circuits and Technology, Roorkee, pp. 5-8, 2001, S. K. Panigrahi and A. K. Panda.
  28. Low-Noise Si/Si1-xGex- based heterostructure MITATT device – Proceedings of APSYM-2000, Kochi, pp.127-129, 2000, S. K. Panigrahi and A K Panda
  29. Millimeter-Wave Properties and Noise of GaN-based IMPATTs –Proceedings of the International Conference on Communications, Computers and Devices (ICCCD-2000), vol.1, pp.231-233, 2000, A. K. Panda, D. Pavlidis, and E. Alekseev.
  30. A Computer method for minimization of avalanche noise in an IMPATT diode - SPIE, vol.3316, pp.1000-1002, 1998, S. K. Dash, A.K. Panda and S.P. Pati.
  31. Determination of series resistance of an IMPATT diode by computer simulation Method – SPIE, vol.3316, pp.672-675, 1998, S. Satapathy, A.K. Panda and S.P. Pati.
  32. Computer aided determination of series resistance in Si, GaAs and InP IMPATT diode – Proceedings of the International Conf. on CODEC, Allied Publishers, p.617, 1998, S. Satapathy, A.K. Panda and S.P. Pati.
  33. Optical control of mm-wave performance of photosensitive heterojunction DDRs in MITATT mode – SPIE, vol. 2997, pp.35-45, 1997, S.P. Pati, S. Satapathy, G.N. Dash and A.K. Panda.
  34. Computer aided optimization of ion implanted charge bump parameters for RF silicon SDR – SPIE, vol. 2875, pp.216-225, 1997, S.P. Pati and A.K. Panda.
  35. The potentiality of Si/SiGe heterostructure MITATT devices, ICSMT 1996, J.K. Mishra, A.K. Panda and G.N. Dash.
  36. Effect of saturated current on mm-wave properties of GaInAsP and hetero InP/GaInAsP DDRs, ICSMT 1996, S. Satapathy, A.K. Panda, G.N. Dash and S.P. Pati.
  37. Crystal structure dependence of avalanche noise in InAlGaAs DDR, ICSMT 1996, S.K. Dash, A.K. Panda, S. Satapathy and S.P. Pati.
  38. High frequency design optimization of InP/GaInAs and InP/GaInAsP heterojunction DDRs, Asia-Pacific Microwave conference Proceedings, vol.2, pp.461-464, 1996, J.K. Mishra, A. K. Panda and G. N. Dash.
  39. Role of avalanche phase delay on determination of the microwave properties of different IMPATT diode structures, Asia-Pacific Microwave conference Proceedings, Vol.2, pp.469-472, 1996, A. K. Panda, S. P. Pati and S.K. Roy.
  40. MM-wave characteristics of GaAs/GaInAs heterojunction in MITATT mode considering photon injection – SPIE, vol. 2401, pp.33-43, 1995, S.P. Pati, S. Satapathy, A.K. Panda and G.N. Dash.
  41. Generation of ion-implantation profiles with three moment approach for realization of n+npp+ DDRs, Physics of Semiconductor Devices, Narosa Publishing House (IWPSD-95), pp.199-201, 1995, A.K. Panda and S.P. Pati.
  42. Band splitting in high frequency GaAs DDRs due to diffusion current, Physics of Semiconductor Devices, Narosa Publishing House (IWPSD-93), pp.199-201, 1993, G.N. Dash, S.P. Pati and A.K. Panda.
  43. IMPATT mode operation of W and D band Si DDRs with carrier diffusion current – Proceedings of the 4th ISRMT, Wiley Eastern Ltd., pp.130-133, 1993, G.N. Dash, A.K. Panda, J.K. Mishra and S.P. Pati.
  44. Potentiality of heterojunctions with GaAs and InP for MITATTs – 2nd International Conference on Semiconductor material, New Delhi, Dec. 1992, G. N. Dash, A.K. Panda and S.P. Pati.
  45. Effect of impurity pattern at semiconductor diode transition points on microwave properties of ATT devices – NASECODE-VIII, Vienna, May 1992, S.P. Pati, G. N. Dash and A.K. Panda.
  46. Computer studies on MM-wave InP IMPATTs- Bulletin of Orissa Physical Society, 1998, S. K. Dash, S. Satapathy, A.K. Panda, G. N. Dash, and S. P. Pati
  47. Favorable avalanche breakdown characteristics in InGaAs and AlGaAs/GaAs p-n junction – Condensed Matter Days 97, P.K. Dash, A.K. Panda, S. Satapathy and S.P. Pati.
  48. Studies on the noise electric field profile for InP/GaInAs heterostructure MITATT diode - Bulletin of Orissa Physical Society, 1997, J. K. Mishra, A.K. Panda, and G. N. Dash.
  49. Study on control of microwave properties of silicon avalanche diodes with variation of carrier injection current (s) - Proceedings of SSP Symposium, Vol.39C, p.146, 1996, S. Satapathy, A.K. Panda and S.P. Pati.
  50. Studies on Si/SiGe heterostructure MITATT DDR with one sided SiGe layer - Proceedings of SSP Symp., Vol.39C, p.41, 1996, J.K. Mishra, A.K. Panda, G.N. Dash and S.P. Pati.
  51. Minimization of excess noise in a GaAs APD by modulating the diffusion doping profile - Proceedings of INCURSI 96, pp.IV-1 to IV-3, J.K. Mishra, A.K. Panda and G.N. Dash.
  52. Favorable microwave characteristics of DAR diode at high current densities – Proceedings of INCURSI 96, pp.III-9 to III-12, A.K. Panda and S.P. Pati.
  53. Computer studies on the microwave properties of ion implanted p+pnn+ DDRs with three moment approach – Proceeding of the National Symposium on Recent Advances in Electronics, 1995, A.K. Panda, S. Satapathy, G.N. Dash and S. P. Pati.
  54. Generation and optimization of diffusion based Si IMPATT diodes – Recent Advances in Microwaves and Light Waves, New Age International Publishers, pp.517-524, 1995, S.P. Pati and A.K. Panda.
  55. Microwave characteristics of InAlGaAs p-n junction with bulk/superlattice /sawtooth band structures - Proceedings of SSP Symp., Vol.35C, p.453, 1995, S.P. Pati, S. Satapathy, A.K. Panda and S.K. Dash.
  56. CAD for improvement of mm-wave characteristics of ATT devices in MITATT mode – Integrated Electronics; Allied Publishers Ltd.: New Delhi, p.237, 1994, S.P. Pati, G.N. Dash and A.K. Panda.
  57. Effect of low multiplication factor on the microwave properties of Si SD and DD IMPATT diodes – Electronic Systems and applications; Allied Publishers Ltd.: New Delhi, p.16-20, 1994, S. Satapathy, A.K. Panda, G.N. Dash, S. K. Dash and S.P. Pati.
  58. Generalized computer method for determination of avalanche noise in IMPATT diodes - Electronic Systems and applications; Allied Publishers Ltd.: New Delhi, p.78-81, 1994, S. K. Dash, G.N. Dash, A.K. Panda, and S.P. Pati.
  59. Role of avalanche phase delay in the performance of GaAs DDRs with different crystal orientations - Proceedings of APSYM-CUSAT 94, pp.105-108, A.K. Panda, S. Satapathy, S.K. Dash, G. N. Dash and S.P. Pati.
  60. Multiple band microwave oscillations in 8-350 GHz range from silicon Double Avalanche Region Diode - Proceedings of APSYM-CUSAT 94, pp.94-99, A.K. Panda, G. N. Dash and S.P. Pati.
  61. Avalanche phase delay in Si, GaAs and InP p-n junctions - Proceedings of SSP Symp., Vol.32C, p.525, 1994, A.K. Panda, S. Satapathy, S.K. Dash, G.N. Dash and S.P. Pati.
  62. Effect of carrier diffusion on high power Si flat DDRs – Advances in Microwaves; Asian Books Pvt. Ltd.: New Delhi, pp.109-114, 1993, G. N. Dash, A.K. Panda, and S.P. Pati.
  63. Effect of carrier diffusion current on millimeter wave characteristics of InP SDRs – Proceedings of APSYM-CUSAT 92, pp.393-396, G. N. Dash, A.K. Panda, K. Mishra and S.P. Pati.
  64. Estimation of tunnel current in Si, GaAs and InP DDRs - Proceedings of SSP Symp., Vol.35C, p.442, 1992, G. N. Dash, A.K. Panda, S.P. Pati and K. Mishra.