SECOND SEMESTER

ELECTRONIC DEVICES
FULL MARKS: 100. TIME: 3 HOURS.

Semiconductors:

Energy band, conduction in semiconductors; the intrinsic semiconductors; n and p materials; charge densities in p and n materials; conduction by charge drift; conduction by diffusion of charge.

Junctions:

The p-n junction, the p-n diode equation.

P – N Junction Diodes:

Forward resistance of the p-n diode; capacitance of p-n junction; diode switching; the ideal diode; clipping and clamping circuits; half-wave, full wave and bridge rectifier circuits; ripple factor; voltage multiplyiong rectifier circuits; zener diode; photo diode; LED.

Bipolar junction transistor:

BJT; load line; characteristics; Ebers-Moll Model; hybrid-pl model, blasing, CE, CC & CB configuration,

Field Effect Transistors:

FET; JFET; MOSFET; circuit characteristics of FET; bias for FET.

Amplifiers:

RC-coupled CE-amplifier; frequency response of RC amplifier; handwidth of cascaded amplifier; gain-bandwidth product; class A power amplifier; push-pull principle; class B push-pull amplifier.

Integrated Circuits:

Semiconductor material and processing; integrated circuits; passive elements; translent behaviour of diodes and transistors, IC amplifiers, TTL and CMOS inverters.

Text Book

Electronic Devices and Circuits - Mottershed.

Electronic Fundamentals and Applications - J.D. Ryder.

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