Application for Junior Research Fellowship

Development of Cost-effective, Low-Power, Flexible Non-Volatile Memory Devices using
Nano-Crossbar Arrays Organic Resistive Switching Memories (Flex-ORRAM)

  • Applications are invited in prescribed format from the candidates for recruitment of Junior Research Fellow (JRF/ Project Assistant) under DST-SERB research project entitled “Development of Cost-effective, Low-Power, Flexible Non-Volatile Memory Devices using Nano-Crossbar Arrays Organic Resistive Switching Memories (Flex-ORRAM)”. The work will leads to PhD of the candidate. Those are not interested for PhD no need to apply.
  • Required qualification: 1st class M.Tech in EEE/EIE/ECE/VLSI/Nanotechnology, M.Sc. in Physics/Applied Physics/Electronic Science/ Nanotechnology or related subjects.
  • No. of Post: 1 (one)
  • Prerequisite: Experience in thin film technology, RRAM technology, organic devices, crossbar devices.
  • Desirable: GATE/NET qualified is preferable. Experience in thin film technology, or project related research, or major courses learned during masters or masters thesis in this area will be preferred. Preference will be given those are confident in Labview or any other simulation or programming.
  • Fellowship: For JRF: Rs. 31000.00 per month + HRA. For PA salary as per SERB norms.
  • Tenure: Initially 1 year, can extend to 2 years or till the termination of the project whichever is earlier if the performance is satisfactory.
  • How to Apply: Application should be sent to Dr. Debashis Panda, Principal Investigator, Department of Physics, National Institute of Science and Technology, Palur Hills, Berhampur, Orissa, 761008, through speed post and also e-mail: dpanda@nist.edu.

    Application must contain prescribed Application form with supportive self attested documents, experienced certificates, programming certificate or details knowledge and an one page SOP. Short-listed candidates will be intimated by e-mail only for interview. No TA/DA will be admissible to attend the interview.
  • Application deadline: 15th January, 2020
Download Application Form

Structural Modification of Flexible Solar Cell by
Incorporating Graphene tapered ZnO Anti-reflector in Wearable Electronics Power Solutions

  • Applications are invited in prescribed format from the candidates for recruitment of Junior Research Fellow (JRF) under DST-SERB research project entitled “Structural Modification of Flexible Solar Cell by Incorporating Graphene tapered ZnO Anti-reflector in Wearable Electronics Power Solutions”
  • Required qualification: 1st class M.Tech in EEE/EIE/ECE, M.Sc. in Physics/Electronic Science
  • No. of Post: 1 (one)
  • Prerequisite: Sufficient knowledge and experience in the following areas are required: Synthesis of Graphene, Hydrothermal synthesis of ZnO nanorods, Thin Film Deposition and Characterization, Photovoltaic
  • Desirable: GATE/NET Qualified
  • Fellowship: Rs. 31000.00 per month for first and second year and Rs. 35000.00 per month for third year.
  • Tenure: 3 years or till the termination of the project whichever is earlier.
  • How to Apply: Application should be sent to Dr. Sandipan Mallik, Principal Investigator, Department of ECE, National Institute of Science And Technology, Palur Hills, Berhampur, Orissa, 761008, through post or e-mail: sandipan@nist.edu. Application should contain detailed resume including the qualifications and experience. Short-listed candidates will be intimated by e-mail only. NIST Berhampur will not pay for the travelling to attend the interview.
  • Apply on or before 15th January, 2020
Download Application Form